Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

Cheralathan, M.,Sampedro, C.,Gamiz, F.,Iniguez, B.

Ultimate Integration Silicon（2013）

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摘要

In this paper we include the effect of temperature dependence in our compact model for Double Gate (DG) MOSFETs using advanced transport models, and we show that the model has a good degree of agreement with the 2D numerical simulation obtained using Multisubband Monte Carlo simulation. The core model is based on a compact charge control model for charge quantization. A template device representative for a downscaled symmetric double-gate MOSFET was used to validate the model.

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关键词

mosfet,monte carlo methods,numerical analysis,2d numerical simulation,dg mosfet,advanced transport models,analytical drain current model,charge quantization,compact charge control model,core model,downscaled symmetric mosfet,multisubband monte carlo simulation,nanoscale double-gate mosfet,temperature dependence model,template device representative,semiconductor device modeling,logic gates

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