High temperature stability of nitride-based power HEMTs

D Maier,M M Alomari,Erhard Kohn,M A Difortepoisson,C Dua,S L Delage,N Grandjean, J F Carlin,A Chuvilin,Ute Kaiser,David Troadec,C Gaquiere

Microwave Radar and Wireless Communications（2010）

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摘要

The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. Failure is thought to be contact metallization related, indicating an extremely robust InAlN/GaN heterostructure.

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关键词

gan heterostructures,high-temperature electronics,inaln/gan hemt,reliability,testing,stability,operant conditioning,temperature measurement,logic gates,gold,thermal stability,intrusion detection,temperature

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