High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Y C Chou,D L Leung,M Biedenbender,D C Eng,D Buttari,X B Mei,C H Lin,R S Tsai,R Lai,M Barsky,M Wojtowicz,A K Oki,T Block

Indium Phosphide & Related Materials（2010）

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摘要

Accelerated temperature lifetesting at Tchannel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 <; -1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1 × 108 hours at Tchannel of 125°C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.

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关键词

high electron mobility transistors,indium compounds,integrated circuit reliability,low noise amplifiers,platinum,hemt low-noise amplifiers,inp,accelerated temperature lifetesting,advanced military-space applications,electron volt energy 1.8 ev,size 0.1 mum,size 100 mm,temperature 125 degc,temperature 240 degc,temperature 255 degc,temperature 270 degc,activation energy,logic gates,low noise amplifier

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