Design of multi-octave band GaN-HEMT power amplifier

Gulesin Eren,Ozlem A Sen,Basar Bolukbas,Gokhan Kurt,Orkun Arican,Omer Cengiz,Sila T K Unal,Yildirim Durmus,Ekmel Ozbay

Electron Devices and Solid State Circuit（2012）

引用 1|浏览8

暂无评分

摘要

This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power.

查看译文

关键词

hemt integrated circuits,iii-v semiconductors,mmic,gallium compounds,microwave amplifiers,power amplifiers,wide band gap semiconductors,cpw circuit,mmic amplifier,continuous wave cw) power,coplanar waveguide circuit,frequency 6 ghz to 18 ghz,gallium-nitride hemt technology,monolithic microwave integrated circuit amplifier,multioctave band gan-hemt power amplifier design,size 0.3 mum,gan hemt,amplifier,gain equalization networks,multi-octave bandwidth,wide-band matching networks

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要