Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation

Shosuke Fujii,Jun Fujiki,Naoki Yasuda,Ryota Fujitsuka,Katsuyuki Sekine

Reliability Physics Symposium（2010）

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摘要

We clarify the origin of erase improvement in MONOS memories with Si-rich SiN layer, and investigate the impact of erase mechanism on cycling degradation. It is demonstrated that cycling degradation is uniquely determined by charges injected during erase operations irrespective of program/erase condition, number of program/erase cycling, or MONOS structure.

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关键词

mos memory circuits,silicon compounds,monos memory,sin-sio2-si,cycling degradation,erase mechanism transition,program-erase condition,be-monos,monos,tanos,nonvolatile memory,silicon,capacitors,degradation,condition number

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