Electrical Behavior Of Phase-Change Memory Cells Based On Gete
Electron Device Letters, IEEE(2010)
摘要
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely rapid SET operation (yielding a gain of more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up to 1 x 10(5), with 30-ns SET and RESET stress time, and third, a better retention behavior at high temperature with respect to GST PCMs. These results, obtained on single cells, suggest GeTe as a promising alternative material to standard GST to improve PCM performance and reliability.
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关键词
Chalcogenide,germanium,GeTe,nonvolatile memories,phase-change (PC) memories (PCMs),telluride
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