Electro-thermal simulation and design of a 60 A, 4.5 kV half-bridge Si IGBT/SiC JBS hybrid power module
Energy Conversion Congress and Exposition（2012）
摘要
This paper presents the results from a parametric simulation study that was conducted to optimize the design of a high-current 4.5 kV half-bridge Si-IGBT/SiC-JBS hybrid module for medium voltage hard-switched power conversion as well as to compare the performance of the hybrid module to the all-Si configuration. The simulations are performed for a circuit that emulates hard-switched conditions similar to a full wave inverter and utilizes validated electro-thermal models for the 4.5 kV Si IGBT, Si PiN diode, and SiC JBS diode and a validated thermal model for the module package. Simulations for various circuit and module parameters including the size and number of SiC JBS diode chips, gate resistances and switching frequencies are used to design the module to be used for demonstration in a Naval power converter application.
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关键词
schottky barriers,schottky diodes,bridge circuits,circuit optimisation,electric resistance,elemental semiconductors,insulated gate bipolar transistors,invertors,modules,p-i-n diodes,power conversion,power semiconductor switches,semiconductor device packaging,silicon,silicon compounds,switching convertors,wide band gap semiconductors,jbs diode chips,pin diode,si,sic,circuit parameters,design optimization,electrothermal design,electrothermal model,electrothermal simulation,full wave inverter,gate resistances,high-current half-bridge igbt-jbs hybrid power module,hybrid module performance,junction barrier schottky diode,medium voltage hard-switched power conversion,module package,module parameters,naval power converter application,silicon carbide,switching frequencies,voltage 4.5 kv,junction barrier schottky (jbs),silicon carbide (sic),hybrid half-bridge module,medium-voltage,power systems,switches
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