InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR

B Oyama,D Ching,Khanh Thai,Augusto Gutierrezaitken, N Cohen,D Scott,Kelly Hennig, E Kaneshiro,P Nam, Jiajia Chen,P Changchien,Vipulkumar Patel

Compound Semiconductor Integrated Circuit Symposium（2012）

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摘要

Gigahertz-rate Digital-to-Analog Converters (DACs) have become readily available from several commercial vendors but have been unable to achieve >;70 dB spurious-free dynamic range (SFDR) performance over a wide bandwidth (≥500MHz). This paper presents the results of a unique, heterogeneously-integrated (InP HBT with 0.18um silicon CMOS), 13-bit 1.33Gsps DAC that achieves >;70dB SFDR across a 500MHz bandwidth in the second Nyquist zone (750MHz to 1250MHz).

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关键词

cmos integrated circuits,digital-analogue conversion,elemental semiconductors,heterojunction bipolar transistors,indium compounds,silicon,hbt cmos-based digital-to-analog converter,inp-si,sfdr,bandwidth 500 mhz,commercial vendors,frequency 750 mhz to 1250 mhz,gigahertz-rate dac,second nyquist zone,size 0.18 mum,spurious-free dynamic range performance,word length 13 bit

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