Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

David S Meyaard,Guanbo Lin,Qifeng Shan,Jaehee Cho,E Fred Schubert,Hyun Wook Shim,Minho Kim,Cheolsoo Sone

Lasers and Electro-Optics（2012）

引用 132|浏览12

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摘要

We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.

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关键词

iii-v semiconductors,carrier density,carrier mobility,gallium compounds,indium compounds,light emitting diodes,p-n junctions,wide band gap semiconductors,gainn-gan,carrier concentration,carrier transport asymmetry,efficiency droop,light emitting diode

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