Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

Wei Zhou,Zhiguo Meng,Shuyun Zhao,Meng Zhang,Rongsheng Chen,Man Wong,Hoising Kwok

Electron Device Letters, IEEE（2012）

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摘要

Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

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关键词

cryogenic electronics,elemental semiconductors,silicon,thin film transistors,bg conduction,si,bridged-grain technique,high drain electric held,improved current flow,leakage current,low-temperature solid-phase-crystallized thin film transistors,maximum held-effect mobility,on-off ratio,polycrystalline-silicon thin-film transistors,subthreshold slope,threshold voltage,bridged grain (bg),polycrystalline silicon (poly-si),thin-film transistors (tfts),crystallization,grain size

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