SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

Y Tagro,Daniel Gloria,S Boret,S Lepillet,Gilles Dambrine

Capri（2009）

引用 9|浏览27

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摘要

In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110 GHz for BiCMOS 130 nm technologies characterization. |GammaSMAX| up to 0.75 has been achieved at the DUT input in this frequency range and NFmin of 2.6 dB has been extracted on tested device @ 77 GHz.

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关键词

bicmos analogue integrated circuits,ge-si alloys,mimic,carbon,heterojunction bipolar transistors,millimetre wave bipolar transistors,noise measurement,tuning,wide band gap semiconductors,bicmos technologies,hbt noise parameters extraction,sige:c,device under test,electrical simulation,frequency 60 ghz to 110 ghz,in-situ silicon integrated tuner,integrated on-wafer,millimeter wave noise parameter extraction,multiimpedance method,noise figure 2.6 db,size 130 nm,active devices,hbt,impedance tuner,in-situ lab,millimeter wave,noise,impedance

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