Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25μm power pHEMT technology

M Dinari, Veronique Serru, M Camiade, C Teyssandier, Didier Baglieri, E Durand,Benoit Malletguy,Jeanphilippe Plaze

Rome（2009）

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摘要

In the frame of radar and warfare applications, a monolithic microwave integrated circuit (MMIC) mixer has been developed using a UMS GaAs 0.25 μm power pHEMT technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point higher than 16 dBm and an input IP3 of 25 dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.

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关键词

iii-v semiconductors,mmic mixers,gallium arsenide,power hemt,power integrated circuits,gaas,ums gaas,frequency 6 ghz to 18 ghz,fully integrated broadband mixer,high isolation mixer mmic,input ip3,input rf compression point,monolithic microwave integrated circuit mixer,power phemt technology,wide frequency band high linearity,monolithic microwave integrated circuit

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