Replacement metal gate extendible to 11 nm technology

Naomi Yoshida,Xinyu Fu,Kun Xu,Yu Lei,Haichun Yang,Shiyu Sun,Hao Chen,Andrew Darlak,Ray Donohoe,C Lazik, Rajkumar Jakkaraju,Atif Noori,Steven Hung,Igor Peidous,Chorngping Chang,Adam Brand

VLSI Technology（2012）

引用 4|浏览46

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摘要

This paper describes novel Co-Al metal fill capable of filling sub-10nm trenches. Co-Al fill shows advantages in threshold voltage (VTH) variation. The conductivity of the fill was evaluated using a Co-Al alloy conductance model. By demonstrating better VTH variability, superior conductivity and gap fill, Co-Al shows extendibility to the 11nm metal gate and beyond.

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关键词

cmos integrated circuits,mosfet,aluminium alloys,cobalt alloys,electrical conductivity,nanostructured materials,coal,alloy conductance model,fill conductivity,gap fill,metal fill,replacement metal gate extendibility,size 11 nm,superior conductivity,threshold voltage variation,trench filling,conductivity,tin,logic gates

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