A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS

Balteanu, A., Sarkas, I.,Dacquay, E.,Tomkins, A.

Radio Frequency Integrated Circuits Symposium（2012）

引用 11|浏览3

暂无评分

摘要

A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >;14.5 Vpp differential output swing, a drain efficiency of 21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at 45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.

查看译文

关键词

CMOS integrated circuits,amplitude shift keying,digital-analogue conversion,millimetre wave integrated circuits,phase shift keying,silicon-on-insulator,ASK modulation,BPSK,PAE,SOI CMOS,differential swing,efficiency 14.6 percent,efficiency 21.3 percent,frequency 45 GHz,millimetre wave DAC,size 45 nm,word length 2 bit,ASK,BPSK,SOI CMOS,mm-wave DAC,polar modulation,power amplifier,

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要