A W-band power amplifier in 65-nm CMOS with 27GHz bandwidth and 14.8dBm saturated output power
Radio Frequency Integrated Circuits Symposium（2012）
摘要
A W-band power amplifier in 65-nm CMOS technology is presented in this paper. This PA is a 3-stage common source design using thin film microstrip lines to realize the matching network. Choosing high-pass topology for the inter-stage matching network and low-pass matching for the input and output to compensate device frequency response, we achieve a wide band and high output power PA. From the measurement results, under 1.2 V supply voltage, the small signal gain of this PA is 12 dB with 27 GHz 3-dB bandwidth (79-106 GHz). The saturated output power is 14.8 dBm, and P1dB is 12.5 dBm. This W-band PA demonstrated widest bandwidth among the reported CMOS PA in this frequency regime, with state-of-the-art output power performance, and a miniature size.
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关键词
CMOS analogue integrated circuits,field effect MIMIC,frequency response,microstrip lines,millimetre wave amplifiers,millimetre wave integrated circuits,CMOS PA,W-band power amplifier,bandwidth 27 GHz,device frequency response compensation,frequency 79 GHz to 106 GHz,gain 12 dB,high-pass topology,interstage matching network,low-pass matching,matching network,saturated output power,size 65 nm,thin film microstrip lines,three-stage common source design,voltage 1.2 V,CMOS,Power Amplifiers,W-band,mm-Wave,
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