A variation-aware 0.57-V set-associative cache with mixed associativity using 7T/14T SRAM

Faible Tension Faible Consommation(2012)

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摘要
In this paper, we present a novel cache scheme which efficiently reduces the minimum operating voltage (Vmin) despite manufacturing-induced defective SRAM cells. The proposed low-voltage scheme exploits the fact that locations of defective SRAM cells are usually non-uniformly scattered. It also leverages the reliable characteristics of 7T/14T SRAM and allows associativites in each index to be different. Our evaluation results show that the proposed cache can reduce Vmin of 64 KB 8-way set-associative cache by 80 mV within 7.81% capacity and 5.22% area overhead.
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关键词
sram chips,cache storage,low-voltage scheme,manufacturing-induced defective sram cell,minimum operating voltage,mixed associativity,variation-aware 0.57-v set-associative cache,transistors,integrated circuit,low voltage,indexation,indexes
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