Design, simulation, and fabrication of a new poly-Si based capacitor-less 1T-DRAM cell

Yunru Chen,Jyitsong Lin,Tzufeng Chang,Yichuen Eng,Pohsieh Lin,Chenghsin Chen

Microelectronics（2012）

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摘要

In this paper, we propose a new fabrication method to form a polysilicon thin-film transistor with a smiling SiO2 layer. The experimental results suggest that the short-channel effects can be significantly reduced because the trench oxide is utilized to block the drain electric field. Furthermore, the so-called S/D tie can help to overcome the self-hating for enhancing the thermal reliability. And the device fabrication process is fully compatible with current conventional CMOS technology.

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关键词

dram chips,reliability,silicon compounds,thin film transistors,s-d tie,sio2,current conventional cmos technology,drain electric field,fabrication method,poly si based capacitor-less 1t-dram cell,polysilicon thin-film transistor,thermal reliability,trench oxide,electric field,silicon,doping,sensors,short channel effect,thin film transistor,fabrication

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