High-κ Gate Dielectrics for Ge CMOS and Related Memory Devices
Silicon-Germanium Technology and Device Meeting（2012）
Key words
CMOS memory circuits,III-V semiconductors,dielectric materials,gallium arsenide,germanium,hole mobility,indium compounds,CMOS,EOT,InGaAs-Ge,UTB IIIVOI,antiphase domain boundary,defect-free GOI,defect-free Ge-on-insulator,dislocation density,electron mobility,equivalent-oxide-thickness,high mobility nMOS,high mobility pMOS,high-κ gate dielectric,hole mobility,lattice-mismatching,mobility degradation,related memory device,size 1.4 nm,size 14 nm,ultra-thin-body IIIV-on-Insulator
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