Modifications of Growth of Strained Silicon and Dopant Activation in Silicon by Cryogenic Ion Implantation and Recrystallization Annealing
Junction Technology（2012）
Key words
MOSFET,carbon,chemical vapour deposition,cryogenics,crystal microstructure,diffusion,ion implantation,laser beam annealing,phosphorus,recrystallisation annealing,semiconductor doping,semiconductor epitaxial layers,silicon,silicon alloys,solid phase epitaxial growth,CVD selective epitaxy,FinFET S/D,P-activation,S/D process integration,Si:C,Si:P,annihilating defects,cryogenic implantation,cryogenic ion implantation,cryogenic ion-implant amorphization,crystallographic plane,defect-free microstructure,diffusion,dopant activation,epitaxial layer,epitaxially grown film,fin sidewall,heavily doped silicon alloys,nonmelt laser annealing conditions,nonmelt laser annealing recystallization,nonmelt laser annealing regrowth,recrystallization annealing,solid-phase epitaxy,strained silicon
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