11.72-$\Hbox{cm}^{2}$ Active-Area Wafer-Interconnected P-I-n Diode Pulsed at 64 Ka Dissipates 382 J and Exhibits an Action of 1.7 $\Hbox{ma}^{2}\cdot\hbox{s}$
IEEE ELECTRON DEVICE LETTERS（2012）
关键词
Action,di/dt,full-wafer diode,high voltage,P-i-n diode,pulsed power,wafer interconnection,4H-SiC
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