Results from the First Prototype of Large 3D Active Edge Sensors

Angela Kok,M. Boscardin,G-F Dalla Betta,C. Da Via',G. Darbo,C. Fleta,T-E Hansen,J. Hasi,C. Kenney,N. Lietaer,M. Lozano,S. I. Parker,G. Pellegrini,A. Summanwar

2011 IEEE Nuclear Science Symposium Conference Record（2011）

引用 7|浏览18

关键词

radiation effects,readout electronics,semiconductor counters,sputter etching,wafer bonding,3D active edge sensors,ATLAS FE-I4 readout electronics,SINTEF MiNaLab,deep reactive ion etching,edgeless capability,radiation hardness,size 18.5 mm,size 20.5 mm,wafer bonding

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