Single-walled nanotube MIS memory devices

Nanotechnology(2011)

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摘要
Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×1012/cm2.
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mis devices,capacitance,carbon nanotubes,mis memory device,sds-based swcnt,swcnt charge storage element,swcnt device,capacitance-voltage characteristics,charge leakage,electron injection,hybrid metal-insulator-semiconductor,layer-by-layer deposition,memory window,polyethyleneimine,polymethylmethacrylate,single-walled carbon nanotube,sodium dodecyl sulphate,nonvolatile memory,silicon,carbon nanotube,hysteresis,layer by layer
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