Shunt-protected single-electron tunneling circuits fabricated on a quartz wafer

S V Lotkhov,Benedetta Camarota,Hansjorg Scherer,Thomas Weimann,P Hinze,A B Zorin

Traverse City, MI（2009）

引用 4|浏览3

暂无评分

摘要

We address fabrication challenges for the single-electron tunneling (SET) devices, based on ultrasmall junctions Al/AlOx/Al. Nanoscale SET components are known to be very fragile in respect to electrostatic breakdown, which turns out to be a critical problem for devices, fabricated on insulating substrates. For the breakdown prevention, we successfully realized on-chip silicon shunts, whose conductivity advantageously vanished at low temperatures, making possible undisturbed SET operation at T ~ 100 mK.

查看译文

关键词

aluminium,aluminium compounds,electric breakdown,quartz,single electron devices,tunnelling,wafer-scale integration,al-alox-al,electrostatic breakdown,on-chip silicon shunts,quartz wafer,shunt protected single electron tunneling circuits,ultrasmall junctions,single-electron tunneling,electron charge,electron-beam lithography,low-permittivity substrates,chip,chromium,electrostatics,circuits,temperature,silicon,tunneling,resistance,electron beam lithography,conductivity,fabrication

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要