Spin-RAM for Normally-Off Computer

Kentaro Ando,Kazuaki Yakushiji,Hitoshi Kubota,Akio Fukushima,Shinsuke Yuasa,Tadashi Kai,Tatsuya Kishi, N Shimomura,Hisanori Aikawa,Masatoshi Yoshikawa,Tomoyuki Nagase, Keitaro Nishiyama,Eiji Kitagawa,Tadaomi Daibou, Masatsugu Amano, Susumu Takahashi,Masato Nakayama,Shiro Ikegawa, M Nagamine,Johji Ozeki,Daisuke Watanabe,Hiroaki Yoda,Takayuki Nozaki,Yasuyuki Suzuki,Mikihiko Oogane,Shigemi Mizukami, Yoriko Ando,Takamichi Miyazaki,Yoshinobu Nakatani

Non-Volatile Memory Technology Symposium（2011）

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摘要

Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

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关键词

magnetic tunnelling,magnetisation,random-access storage,infinite read-write endurance,low power computer,magnetic tunnel junction,memory capacity,normally-off computer,perpendicular magnetization layer,power-gating technology,spin ram technology,mtj,spin-ram,tmr,current-induced-magnetization-reversal,perpendicular magnetization

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