Single-Metal Dual-Dielectric (SMDD) Gate-First CMOS Integration Towards Low VT and High Performance
PROCEEDINGS OF TECHNICAL PROGRAM 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS（2009）
Key words
CMOS integrated circuits,dielectric materials,semiconductor device reliability,Al2O3,La2O3,gate-first CMOS integration,host dielectric,metal gate electrode,nMOS,pMOS,single-metal dual-dielectric
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