Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit

Electron Devices Meeting(2011)

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摘要
This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at VDD = 6 V.
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关键词
cmos integrated circuits,elemental semiconductors,nanoelectromechanical devices,silicon,si,e-beam,functional cmos-nem hybrid circuit,nanoelectromechanical relays,voltage 6 v,chip
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