Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation
Infrared, Millimeter and Terahertz Waves(2011)
摘要
We report on microwave (mw) radiation induced electric currents in
(Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external
in-plane magnetic field. The current generation is attributed to the
spin-dependent energy relaxation of electrons heated by mw radiation. The
relaxation produces equal and oppositely directed electron flows in the spin-up
and spin-down subbands yielding a pure spin current. The Zeeman splitting of
the subbands in the magnetic field leads to the conversion of the spin flow
into a spin-polarized electric current.
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关键词
ii-vi semiconductors,iii-v semiconductors,cadmium compounds,electric current,elemental semiconductors,indium compounds,magnetic field effects,manganese compounds,microwaves,semiconductor heterojunctions,semiconductor quantum wells,semimagnetic semiconductors,silicon,spin polarised transport,cdmnte,inas:si,current generation,in-plane magnetic field,microwave radiation,nonmagnetic quantum wells,semiconductor heterostructures,semimagnetic quantum wells,spin polarized electric currents,spin-dependent energy relaxation
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