Broadband 31-65 Ghz Inductorless Active Balun With 12.4 Db Gain In 0.13 Mu M Sige:C Bicmos Technology
Microwave Conference(2011)
摘要
An inductorless single-ended input to differential output active balun is presented. The balun has a 12.4 dB gain at 50 GHz and a 3-dB bandwidth from 31 to 65 GHz. Measured maximum amplitude and phase errors between the two outputs are 0.5 dB and 2.5 degrees, respectively. Measured input and output reflection are below -15 dB and -10 dB respectively and the reverse isolation is better than 38 dB. Time domain measurements indicate 1.4 ps and 187 fs peak-to-peak and rms jitter, respectively. The balun is designed in a 0.13 mu m SiGe:C BiCMOS technology, dissipates 278 mW and occupies 0.47 mm(2).
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关键词
Active inductors,active circuits,millimeter wave integrated circuits,silicon germanium,broadband amplifiers
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