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Implant Approaches and Challenges for 20nm Node and Beyond ETSOI Devices

S. Ponoth,M. Vinet,L. Grenouillet,A. Kumar,P. Kulkarni,Q. Liu,K. Cheng,B. Haran,N. Posseme,A. Khakifirooz,N. Loubet,S. Mehta,J. Kuss,V. Destefanis,N. Berliner,R. Sreenivasan,Y. Le Tiec,S. Kanakasabapathy,S. Schmitz,T. Levin,S. Luning,T. Hook,M. Khare,G. Shahidi,B. Doris

2011 IEEE INTERNATIONAL SOI CONFERENCE（2011）

Cited 7|Views62
Key words
amorphisation,epitaxial growth,field effect transistors,ion implantation,silicon-on-insulator,ETSOI device,Implanted ions,RSD scheme,amorphization,extremely thin silicon on insulator device,size 20 nm,two step epitaxy scheme
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