Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory

Chiehfang Chen,A G Schrott,M H Lee,S Raoux,Y H Shih,Matthew J Breitwisch,F H Baumann,E K Lai,T M Shaw,P Flaitz,Roger W Cheek,Eric A Joseph,S H Chen,Bipin Rajendran,H L Lung,C Lam

Monterey, CA（2009）

引用 28|浏览52

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摘要

We describe a cycling failure mode in Ge2Sb2Te5-based phase change memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles.

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关键词

antimony compounds,failure analysis,germanium compounds,integrated circuit reliability,phase change memories,thermal analysis,gst programming volume,ge2sb2te5,set-reset thermal operation,cell endurance,cycling failure mode,doping material,phase change memory,thermal conductivity,films,stress,failure mode,materials,doping

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