Design of high power S-band GaN MMIC power amplifiers for WiMAX applications

Omer Cengiz,Ozgur Kelekci,Galip Orkun Arcan,Ekmel Ozbay,Osman Palamutcuogullari

Istanbul（2011）

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摘要

This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of these MMICs were combined by using off-chip Lange Couplers, 45.3 dBm output power with a 45%PAE @3.5 Ghz and 16 dB small signal gain were obtained with less than 0.2 dB gain ripple in the 3.3-3.8 GHz frequency range.

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关键词

iii-v semiconductors,mmic power amplifiers,wimax,amplification,gallium compounds,signal processing,gan,s band gan mmic pa designs,wimax applications,frequency 3.2 ghz to 3.8 ghz,frequency 3.5 ghz,gain 0.2 db,gain 16 db,high power s-band gan mmic power amplifiers,off-chip lange couplers,signal gain,power amplifier,chip,gain,simulation,power generation

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