Manufacturable tri-stack AlSb/INAS HEMT low-noise amplifiers using wafer-level-packaging technology for light-weight and ultralow-power applications

Y C Chou,P Changchien,J M Yang,M Nishimoto,Kelly Hennig,M D Lange,Xiangbo Zeng, Matthew Parlee,C H Lin,L S Lee, P S Nam,Michael Wojtowicz,M Barsky,A K Oki,J B Boos,B R Bennett,N A Papanicolaou

Newport Beach, CA（2009）

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摘要

A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.

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关键词

iii-v semiconductors,aluminium compounds,field effect transistor switches,indium compounds,low noise amplifiers,phase shifters,power amplifiers,power semiconductor switches,wafer level packaging,alsb-inas,hemt receivers,compact tristack transmit-receive module,light-weight applications,switches,tristack hemt low-noise amplifier manufacture,ultralow-power applications,wafer-level-packaging technology,alsb/inas,hemt,ultralow-power,wafer-level-packaging,power amplifier,phased array,wafers,cutoff frequency,low noise amplifier,manufacturing,electron mobility,metallization,phase shifter,power dissipation,gain,gallium arsenide

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