Formation of HfO2/GaAs(001) Interface with Si Interlayer
Micro/Nanotechnologies and Electron Devices（2011）
Key words
III-V semiconductors,X-ray photoelectron spectra,atomic force microscopy,elemental semiconductors,gallium arsenide,hafnium compounds,high-k dielectric thin films,molecular beam epitaxial growth,passivation,semiconductor growth,semiconductor-insulator boundaries,silicon,surface roughness,AFM,C-V method,GaAs,HfO2-Si-GaAs,MBE-grown structure,XPS,e-beam evaporation,interlayer,surface passivation,surface roughness,GaAs,high-k dielectric,surface passivation
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