A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics

Wonho Choi,Hyukmin Kwon,Inshik Han,Taegyu Goo,Minki Na,Chang Yong Kang, G Bersuker,B H Lee,Yoonha Jeong,Hideok Lee,R Jammy

San Francisco, CA（2008）

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摘要

Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (Tinv~1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with the bulk trap characteristics due to greater bulk trap density.

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关键词

mosfet,hafnium compounds,lanthanum compounds,semiconductor device reliability,silicon compounds,hflaon,hflasion,barrier height,bulk trap density,equivalent oxide thickness,gate dielectric,high-k dielectrics,interface characteristics,nmoset,reliability characteristics,size 0.9 nm,logic gates,hot carriers,degradation,dielectrics,comparative study,stress

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