Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitter

Mohammed Zaknoune,H Colder,D A Yarekha,Gilles Dambrine,F Mollot

Versailles（2008）

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摘要

AlxIn1-XP/GaAs0.51Sb0.49 DHBTs with various aluminum contents have been grown by MBE. This was motivated by the poor current gain of the InP/GaAsSb structure. From x = 0.00 to 0.30 the best result is obtained with x = 0.25 with a current gain around 6 times higher.

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关键词

iii-v semiconductors,aluminium compounds,gallium arsenide,gallium compounds,heterojunction bipolar transistors,indium compounds,molecular beam epitaxial growth,alinp-gaassb,dhbt,mbe growth,current gain enhancement,double heterojunction bipolar transistors,graded composition emitter,alinp emitter,gaassb/inp,mbe,gain,solids,radiative recombination,heterojunctions,mocvd,spontaneous emission,aluminum,integrated circuits

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