Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process

Monterey, CA(2008)

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摘要
We report a robust Q-band GaN MMIC LNA operating in the 42-47GHz frequency range using a 0.15 mum T-gate process. The measured noise figure of the MMIC is less than 3.1 dB over the band of interest and the NF has a minimum of 2.9 dB at a frequency of 45.5 GHz. The MMIC gain is between 19 and 20 dB across the band and the input return loss of the MMIC is less than -10 dB. The measured OIP3 of the MMIC is 28 dBm at 45 GHz. The 3 stage MMIC is 2.5times1.3 mm2 and consumes less than 400 mW. To the authors knowledge this is the best combination of RF GaN performance at Q-band and the first reported GaN MMIC LNA in this frequency band.
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iii-v semiconductors,mmic power amplifiers,gallium compounds,low noise amplifiers,millimetre wave power amplifiers,wide band gap semiconductors,gan,mmic gain,q-band mmic lna,t-gate process,frequency 42 ghz to 47 ghz,low noise amplifier,radiofrequency gan performance,size 0.15 mum,indexing terms,noise figure,noise measurement,noise
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