Experimental characterization and simulation of RF intermodulation linearity in a 90 nm RF CMOS technology

Xiaoyun Wei,Guofu Niu,Ying Li,Mingta Yang,Stewart S Taylor

Atlanta, GA（2008）

引用 9|浏览2

暂无评分

摘要

This work examines the intermodulation linearity of 90 nm RF CMOS using IP3 measurement, BSIM4 based simulation, and first order theory. VGS, VDS, and device width dependences are examined. Guidelines to accurately identifying the sweet spot biasing current for larger devices used in RFIC design are provided.

查看译文

关键词

cmos integrated circuits,intermodulation distortion,radiofrequency integrated circuits,bsim4 based simulation,ip3 measurement,rf cmos technology,rf intermodulation linearity,first order theory,size 90 nm,bsim4,lna,linearity,rf cmos,semiconductor device modeling,first order,radio frequency

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要