Low temperature behavior of strained-Si n-MOSFETs

S S Mahato,Debashis Mitra,T K Maiti,P Chakraborty,B Senapati,Anjan Chakravorty,S Sarkar,C K Maiti

Mumbai（2007）

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摘要

The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time.

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关键词

mosfet,spice,elemental semiconductors,low-temperature techniques,silicon,spice parameters,si,low temperature behavior,mobility modeling,strained-si n-mosfet,strained-si,mobility model

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