Fast switching and long retention Fe-O ReRAM and its switching mechanism

Shigenobu Muraoka,K Osano,Yoshihiko Kanzawa,Shinji Mitani,S Fujii,Kengo Katayama,Y Katoh,Z Wei,Takumi Mikawa,Kazuho Arita,Yukio Kawashima,Ronald Azuma,Kenji Kawai,Koichi Shimakawa,Akihiro Odagawa,Tsuyoshi Takagi

Washington, DC（2007）

引用 66|浏览8

暂无评分

摘要

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe3O4 and y-Fe2O3. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.

查看译文

关键词

circuit switching,high-speed techniques,iron compounds,oxidation,random-access storage,reduction (chemical),zinc,feo,high-speed resistance-switching,iron oxide reram,long-retention characteristics,redox reaction,reduction process,resistive memory,time 10 ns

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要