Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment

Congwen Yi,Ruonan Wang,Wei Huang,Wilson C W Tang,Kei May Lau,K J Chen

Washington, DC（2007）

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摘要

The reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by the fluorine plasma treatment technique was investigated by applying OFF-state and ON- state long-term high-electric-field stress. A moderate negative shift (-0.25 V) was observed in the threshold voltage after 288 hours of stress. This shift, however, can be eliminated with an enhancement/depletion dual-gate configuration which effectively prevents high electric field from influencing the fluorine plasma treated area.

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关键词

iii-v semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,plasma materials processing,algan-gan,hemt fabrication,enhancement-depletion dual-gate configuration,fluorine plasma treatment,high-electric-field stress,negative shift,reliability,threshold voltage,electric field

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