The Application of RHBD to N-Mosfets Intended for Use in Cryogenic-Temperature Radiation Environments
IEEE Transactions on Nuclear Science（2007）
关键词
CMOS,cryogenic,cryogenic temperatures,displacement damage,off-state leakage current,radiation hardening by design (RHBD),shallow trench isolation,shallow trench isolation (STI),TID
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要