Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs

Hansoo Joo,Inshik Han,Taekyu Goo,Ooksang Yoo,Wonho Choi,Gawon Lee,Hideok Lee

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE（2006）

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摘要

The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.

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关键词

1/f noise,mosfet,oxidation,semiconductor device noise,initial-oxidation impact,low-frequency noise,n-channel mosfet,subthreshold swing,drain current degradation,flicker noise,initial oxidation,threshold voltage,low frequency noise

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