Observation of disorder induced crossover in the underlying mechanism for the anomalous Hall Effect and intrinsic spin currents in Ga1-xMnxAs

Sae Hwan Chun,Young Sun Kim,H K Choi,I T Jeong,W O Lee,Kwang S Suh,Y S Oh,K H Kim,Z G Khim,J C Woo,Y D Park

San Diego, CA（2006）

引用 0|浏览4

暂无评分

摘要

Here, we report on the transport and Hall measurements on a series of Ga1-xMnxAs where we explicitly control the total Mn concentration (NMn) during low temperature molecular beam epitaxy (LT-MBE) growth and implicitly control group III substitutional Mn concentration (NMn) by low temperature annealing. After growth, monitored by in situ RHEED, and NMrl determined by HRXRD and EPMA, a series of Ga1-xMnxAs epilayers were patterned into Hall bars utilizing standard photolithographic techniques as well as citric acid/hydrogen peroxide-based standard GaAs etchant and annealed in a flowing N2 environment in a tube furnace for an hour with annealing temperature varied from 200-350 degC as monitored near the sample.

查看译文

关键词

iii-v semiconductors,annealing,gallium arsenide,magnetic epitaxial layers,manganese compounds,molecular beam epitaxial growth,reflection high energy electron diffraction,semiconductor epitaxial layers,semimagnetic semiconductors,spin hall effect,gamnas,hall measurements,anomalous hall effect,disorder induced crossover,epilayers,in situ rheed,intrinsic spin currents,low temperature annealing,low temperature molecular beam epitaxy,manganese concentration,photolithographic techniques,tube furnace,underlying mechanism,hydrogen peroxide,temperature control,molecular beam epitaxy,hydrogen,hall effect,control group,etching

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要