RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

G. H. Jessen,J. K. Gillespie,G. D. Via,A. Crespo,Derrick Langley,Michael E Aumer,C. S. Ward,H. G. Henry, Darren B Thomson,Deborah P Partlow

Electron Device Letters, IEEE（2007）

引用 45|浏览7

暂无评分

摘要

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are Imax=1279 mA/mm, IDSS=1182 mA/mm, Rc=0.43 Omegamiddotmm, rhos=315 Omega/sq, fT=45 GHz, fmax(MAG) =64 GHz, and gm=268 mS/mm. Continuous-wave power measurements at 10 GHz produced Psat=3.8 W/mm, Gt=8.6 dB, and PAE=30% at VDS=20 V at 25% IDSS. To our knowledge, these are the first power measurements reported at 10 GHz for this material

查看译文

关键词

iii-v semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,microwave field effect transistors,microwave measurement,power measurement,silicon compounds,wide band gap semiconductors,0.24 micron,10 ghz,150 micron,2 micron,20 v,45 ghz,64 ghz,hemt,inaln-gan,rf power measurements,sic,t-gates,continuous-wave power measurements,alinn,gan,inaln,high-electron mobility transistor (hemt),power,radio frequency,decision support systems,current density,high electron mobility transistor,continuous wave

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要