Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies

This paper presents the noise characteristics of 0.5 μm / 50 GHz Si [8] and 0.5 μm / 70 GHz SiGe [5] bipolar transistors. High-frequency (HF) noise characteristics are shown and compared. Observed similarities and differences are discussed. Low-frequency (LF) noise characteristics are used to extract LF noise model parameters. The corresponding noise sources are included in SpectreRF and the model is applied to simulate oscillator noise characteristics. Comparisons with experimental results are shown which demonstrate the usefulness of the approach for optimization of phase noise.