On the Excess Noise Factors and Noise Parameter Equations for RF CMOS

Yan Cui,Guofu Niu,Ying Li,Stewart S Taylor,Qingqing Liang, J D Cresslerz

Long Beach, CA（2007）

引用 11|浏览3

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摘要

This work examines the differences between the gd0 and gm referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui's empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured and used to evaluate the simple model equations

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关键词

cmos integrated circuits,circuit noise,integrated circuit modelling,parameter estimation,radiofrequency integrated circuits,two-port networks,0.18 micron,cmos process,cmos transistors,fet noise equations,rf cmos,excess noise factors,linear noisy two-port theory,noise parameter equations,fet,noise parameters,noise representations

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