The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

Aravind Appaswamy,Bongim Jun,R M Diestelhorst,Gustavo Espinel, Akanksha Prakash,John D Cressler,P W Marshall,Cheryl J Marshall,Qingqing Liang,Greg Freeman,T Isaacssmith,J R Williams

Ponte Vedra, FL（2006）

引用 13|浏览4

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摘要

The effects of 63 MeV proton irradiation on 90 nm strained silicon CMOS on insulator is examined for the first time. The devices show no observable degradation in DC performance up to an equivalent total dose of 600 krad(Si). The performance of the strained pFETs is identical to unstrained pFETs and demonstrates the immunity of strain to displacement damage. There is no significant enhancement observed in back channel leakage for the maximum dose. Passive exposure to 2 Mrad(Si) using 4 MeV protons doesn't induce any significant performance degradation

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关键词

cmos integrated circuits,protons,radiation hardening (electronics),silicon,silicon-on-insulator,4 mev,63 mev,90 nm,soi devices,si,proton irradiation,radiation tolerance,silicon on insulator,strain-to-displacement damage,strained silicon cmos,soi,total dose effects,space technology,ionizing radiation,degradation,capacitive sensors,pulse width modulation,cmos technology

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