Pilot-Production Yield of Indium Phosphide-Based Thermophotovoltaic Monolithically Interconnected Modules
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference（2006）
关键词
iii-v semiconductors,mocvd,x-ray diffraction,etching,gallium arsenide,indium compounds,integrated circuit interconnections,photolithography,photoreflectance,plasma cvd,semiconductor device manufacture,semiconductor epitaxial layers,thermophotovoltaic cells,vapour phase epitaxial growth,ingaas,inp,movpe,pecvd,epilayer device design,metalorganic vapor phase epitaxy,pilot-production yield,plasma-enhanced chemical vapor deposition,standard proximity photolithography,thermophotovoltaic devices,thermophotovoltaic monolithically interconnected modules,triple-axis x-ray diffraction,wet chemical etching,x ray diffraction,wet etching,epitaxial growth,chemical vapor deposition,crystal growth,inductors,lithography,chemical processes,plasma enhanced chemical vapor deposition,chemical reactors
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