Technology Reliability Qualification of a 65nm CMOS Cu/Low-k BEOL Interconnect

Singapore, 2006, Pages 97-105E.

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During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challen...更多

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