HfSiON Gate Dielectric for 45nm Node Low-Power Device

Tian-Choy Gan,Howard C. -H. Wang, Shang- Chen,Ching-Wei Tsai,Peng-Soon Lim,Huan-Just Lin,Ying Jin,Hun-Jan Tao,Shih-Chang Chen,Ying Keung Leung,Carlos H. Diaz,Mong-Song Liang,Yuh-Jier Mii

Proceedings of the International Power Modulator Symposium and High Voltage Workshop/Proceedings of the International Power Modulator Symposium and High Voltage Workshop（2006）

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关键词

MOSFET,dielectric materials,hafnium compounds,high-k dielectric thin films,low-power electronics,oxygen compounds,semiconductor device breakdown,semiconductor device reliability,silicon compounds,45 nm,EOT stack film,HfSiON,PBTI lifetime,TDDB lifetime,breakdown voltage,gate dielectric,gate leakage reduction,interfacial oxide layer,low-power device,nMOS

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